摘要 :
The forward gated-diode R-G current method for extracting the hot-carrier-stress- induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives ...
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The forward gated-diode R-G current method for extracting the hot-carrier-stress- induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density Form the measured R-G current peak of the gated-diode architecture. An expected power law Relationship between the induced back interface trap density and the accumulated stress time has Been obtained.
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